Silicon dioxide PECVD (TEOS) : View

on front Silicon dioxide PECVD (TEOS)

Process characteristics:

Thickness

Amount of material added to a wafer

0.01 .. 2 µm

Ambient

Ambient to which substrate is exposed during processing

nitrogen, oxygen, TEOS

Deposition rate

Rate at which material is added to a wafer

2592 Å/min

Excluded materials

gold (category), copper

Material

silicon dioxide

Microstructure

amorphous

Pressure

Pressure of process chamber during processing

3 Torr

Residual stress

-55 MPa

Sides processed

either

Temperature

350 °C

Wafer size

Equipment

GSI Ultradep 1000

Equipment characteristics:

Batch sizes

100 mm: 3, 150 mm: 1

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.