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Contact photolithography : View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Contact photolithography
1 Dehydration & vapor prime
on front
2 G-line photoresist coat (AZ4000)
on front
3 G-line photoresist bake (AZ4000)
4 Contact mask align and exposure
5 G-line resist develop (AZ4000)
on front
6 G-line photoresist hardbake (AZ4000)
Process characteristics:
Material
Material*
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 1.3 .. 20 µm
1.3 .. 20 µm
Alignment tolerance
Registration of CAD data to features on wafer
 3 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Min feature size 5 µm
Wafer size
Wafer size
MOS clean no
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