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Tantalum anodization: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Tantalum anodization
Down
on front
1
Tantalum DC Magnetron Sputtering
Material
tantalum
on front
2
Tantalum Anodization
Down
Material
tantalum oxide
on front
3
Stylus Profilometer Step Measurement
Process characteristics:
Perform stylus profilometry
Perform stylus profilometry
*
yes
no
Thickness
Thickness
*
Å
µm
nm
must be 1600 .. 2800 Å
1600 .. 2800 Å
Voltage
Voltage
*
V
must be 100 .. 175 V
100 .. 175 V
Material
tantalum oxide
Wafer size
Wafer size
100 mm
125 mm
150 mm
Comments:
We recommend blanket Ta anodization.