on front Tantalum Anodization |
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| Process characteristics: |
| Thickness Capacitance density @2000 Angstroms is 1.06nF/mm2. |
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| Voltage Anodization rate is 16 Angstroms/volt. |
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| Allowed metals |
tantalum, tantalum oxide (sputtered) |
| Mask materials Materials that can be used to mask etching. |
photoresist (G-line), photoresist (I-line) (category) |
| Material |
tantalum oxide |
| Roughness RMS roughness of a surface |
1 .. 500 Å |
| Sides processed |
either |
| Temperature |
27 °C |
| Wafer size |
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| Equipment |
wet bench |
| Equipment characteristics: |
| Batch sizes |
100 .. 150 mm: 1 |
| MOS clean |
no |
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Borofloat (Schott), ceramic, Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator |
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
| Comments: |
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