Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Tantalum Anodization Down
Process characteristics:
Thickness
Capacitance density @2000 Angstroms is 1.06nF/mm2.
Thickness*
Capacitance density @2000 Angstroms is 1.06nF/mm2., must be 1600 .. 2800 Å
1600 .. 2800 Å
Voltage
Anodization rate is 16 Angstroms/volt.
Voltage*
Anodization rate is 16 Angstroms/volt., must be 100 .. 175 V
100 .. 175 V
Allowed metals tantalum, tantalum oxide (sputtered)
Mask materials
Materials that can be used to mask etching.
 photoresist (G-line), photoresist (I-line) (category)
Material tantalum oxide
Roughness
RMS roughness of a surface
 1 .. 500 Å
Sides processed either
Temperature 27 °C
Wafer size
Wafer size
Equipment wet bench
Equipment characteristics:
Batch sizes 100 .. 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), ceramic, Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • It is recommended that HiDEC sputter the tantalum. Capacitor yield is sensitive to CTE mismatch coupled with temperature extremes as well as surface roughness.
    The roughness parameter given above is related to acceptable surface for tantalum anodization