Tantalum Anodization: View

on front Tantalum Anodization

Process characteristics:

Thickness

Capacitance density @2000 Angstroms is 1.06nF/mm2.

1600 .. 2800 Å

Voltage

Anodization rate is 16 Angstroms/volt.

100 .. 175 V

Allowed metals

tantalum, tantalum oxide (sputtered)

Mask materials

Materials that can be used to mask etching.

photoresist (G-line), photoresist (I-line) (category)

Material

tantalum oxide

Roughness

RMS roughness of a surface

1 .. 500 Å

Sides processed

either

Temperature

27 °C

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 .. 150 mm: 1

MOS clean

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat, notched

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

Borofloat (Schott), ceramic, Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

It is recommended that HiDEC sputter the tantalum. Capacitor yield is sensitive to CTE mismatch coupled with temperature extremes as well as surface roughness.
The roughness parameter given above is related to acceptable surface for tantalum anodization