Silicon dioxide PECVD: View

on front Silicon dioxide PECVD

Process characteristics:

Temperature

200 .. 325 °C

Thickness

0.2 .. 8.0 micron

0.2 .. 8 µm

Ambient

Ambient to which substrate is exposed during processing

helium, nitrogen, nitrous oxide, silane

Deposition rate

Rate at which material is added to a wafer

909 Å/min

Material

silicon dioxide

Pressure

Pressure of process chamber during processing

0.9 Torr

Residual stress

-165 MPa

Sides processed

either

Wafer size

Equipment

Unaxis SLR730

Equipment characteristics:

Batch sizes

100 mm: 3, 125 mm: 3, 50 mm: 3, 75 mm: 3

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat, notched

Wafer holder

Device that holds the wafers during processing.

aluminum chuck

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

alumina, Borofloat (Schott), ceramic, Corning 1737, fused silica, glass-ceramic, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon on insulator, silicon on sapphire, titanium

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

The residual stress was measured on a 2um thick film.