Fusion bonding with alignment |
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| Process characteristics: |
| Bonding force Specify contact force applied to substrates during bonding. |
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| Pressure Pressure of bonding chamber during processing. |
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| Second substrate side bonded Specify which side of the 2nd substrate is to bonded to the 1st substrate.
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| Substrate side bonded Specify which side of the 1st substrate is to bonded to the 2nd substrate. |
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| Temperature Temperature of the substrates during bonding. |
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| Alignment tolerance Registration of CAD data to features on wafer |
5 µm |
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| Alignment type Method used to align materials to be bonded. |
optical |
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| Batch size |
2 |
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| Second substrate diameters |
100 mm |
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| Second substrate thickness |
300 .. 1000 µm |
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| Substrate diameters |
100 mm |
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| Substrate thickness |
300 .. 1000 µm |
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| Wafer size |
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| Attachments |
![[Thumbnail]](file/bf67b47747ed/thumbnail?50) EV_Alignment_Positions.jpg (123.5 KB, image/jpeg)- Required location of alignment features. Assuming the front sides of the wafers will be bonded, the alignment marks should be on the front of one wafer and on the back of the other wafer.
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