Nitrogen anneal: View

Nitrogen anneal

Process characteristics:

Process duration

Running time of the process (excluding setup/shutdown time)

1 .. 180 min

Temperature

Maximum temperature the substrate reaches during a process

450 .. 1100 °C

Ambient

Ambient to which substrate is exposed during processing

nitrogen

Sides processed

both

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 25

MOS clean

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat, notched

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm