Tantalum DC Magnetron Sputtering: View

on front Tantalum DC Magnetron Sputtering

Process characteristics:

Power

Microwave power radiated into substrates being bonded

200 .. 2000 W

Thickness

200 .. 4000 Å

Batch size

Deposition rate

Rate at which material is added to a wafer

240 .. 2400 Å/min

Material

tantalum

Pressure

Pressure of process chamber during processing

5 mTorr

Sides processed

either

Temperature

27 °C

Wafer size

Equipment

Varian XM8 Sputterer

Capable of sputtering titanium, aluminum, and copper. RF etch is also available.

Equipment characteristics:

MOS clean

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat, notched

Wafer holder

Device that holds the wafers during processing.

stainless steel

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 2000 µm

Comments:

Please specify whether samples are to be backsputtered (RF etched) prior to sputtering.