Wet oxidation: View

Wet oxidation

Process characteristics:

Thickness

Amount of material added to a wafer

0.1 .. 1.5 µm

Material

silicon dioxide

Pressure

Pressure of process chamber during processing

1 atm

Sides processed

both

Temperature

900 .. 1100 °C

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 25

MOS clean

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat, notched

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, silicon on insulator

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 800 µm