Photoresist hardbake (hotplate @105C) |
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| Ambient Ambient to which substrate is exposed during processing |
air |
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| Batch size |
1 |
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| Pressure Pressure of process chamber during processing |
1 atm |
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| Sides processed |
both |
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| Temperature |
105 °C |
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| Thermal duration |
2 min |
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| Wafer size |
|
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| Equipment |
Hotplate |
| Equipment characteristics: |
| Die area Die area the equipment can accept |
0.1 .. 100 cm2 |
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| Die dimension Characteristic dimension of dies (e.g., side length of square) the equipment can accept |
10 .. 100 mm |
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| Die holder Device that holds the die(s) during processing |
metal chuck |
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| Die materials List of allowed materials for dies accepted by this equipment |
alumina, gallium arsenide, glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon, Borofloat (Schott), silicon dioxide, silicon germanium, silicon on insulator |
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| Die thickness List or range of die thicknesses the tool can accept |
100 .. 10000 µm |
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| Piece dimension Range of wafer piece dimensions the equipment can accept |
10 .. 100 mm |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
rectangular, circular, triangular shard, irregular, other |
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| Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 10000 µm |
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| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
metal chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, gallium arsenide, glass (category), quartz (single crystal), silicon, silicon germanium, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 10000 µm |
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