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Backside protect (AZ P4400): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Backside protect (AZ P4400)
MaterialAZ P4400
Materialphotoresist (category)
Process characteristics:
Resist thickness
Resist thickness*
must be 1 .. 7 µm
1 .. 7 µm
Material AZ P4400
Max field size 200 mm
Wafer diameter(s)
List or range of wafer diameters the tool can accept
75 .. 200 mm
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), silicon, silicon on insulator
Wafer size
Wafer size
Comments:
  • Please select this module if the other side of the wafer needs to be protected during the front-to-back alignment step of a contact lithography module.