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Anodic bonding (with alignment): View
Process Hierarchy
Bonding
   Anodic bonding
   Fusion bonding
   Glass frit bonding
   Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Anodic bonding (with alignment)
1 Piranha clean II (non-MOS clean)
2 Anodic bonding (with alignment)
Process characteristics:
Pressure
Pressure of process chamber during processing
Pressure
Pressure of process chamber during processing
Second substrate side bonded
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Second substrate side bonded*
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Substrate side bonded
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Substrate side bonded*
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Batch size 2
Temperature 450 .. 500 °C
Voltage 1500 V
Wafer size
Wafer size
MOS clean no
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