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Parylene C deposition: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Parylene C deposition
1 Piranha clean II (non-MOS clean)
2 Application of adhesion promoter (A-174 Silane)
3 Parylene C deposition
MaterialParylene C
on front
4 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Apply adhesion promoter
Apply adhesion promoter*
yes no
Measure film thickness
Measure film thickness*
yes no
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 15 µm
0.1 .. 15 µm
Batch sizes 100 mm: 3
Material Parylene C
Sides processed both
Wafer size
Wafer size
Comments:
  • Thickness measurement can be done only if the Parylene film is on bare silicon.
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