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X-ray photolithography (front-front align) (PMMA): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
X-ray photolithography (front-front align) (PMMA)
Materialphotoresist (category)
on front
X-ray exposure
MaterialPMMA
MaterialPMMA
Process characteristics:
Resist thickness
Resist thickness*
must be 0 .. 550 µm
0 .. 550 µm
Thickness removed
Amount of material removed
0 .. 500 µm
Wafer size
Wafer size