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Contact photolithography (NR1-6000PY): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Contact photolithography (NR1-6000PY)
MaterialHMDS
MaterialNR1-6000PY
MaterialNR1-6000PY
Materialphotoresist (category)
MaterialNR1-6000PY
Materialphotoresist (category)
MaterialNR1-6000PY
on front
Photoresist descum
Materialphotoresist (category)
Process characteristics:
Alignment side
Alignment side*
Perform backside protect
Perform backside protect*
yes no
Resist thickness
Resist thickness*
must be 5 .. 11 µm
5 .. 11 µm
Batch sizes 75 .. 200 mm: 4
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
equal line space
Field geometry
Shape of field with dimensions characterized by the maximum field size
circle
Magnification 1
Material NR1-6000PY
Max field size 200 mm
Min feature size 1 .. 5 µm
Photoresist polarity negative
Wafer diameter(s)
List or range of wafer diameters the tool can accept
75 .. 200 mm
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), silicon, silicon on insulator
Wafer size
Wafer size
Comments: