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Contact photolithography (Shipley 1813): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Contact photolithography (Shipley 1813)
1 Prebake
on front
2 HMDS coat
MaterialHMDS
on front
3 Photoresist coat (Shipley 1813)
MaterialShipley 1813Thickness1.3 µm
4 Photoresist softbake
on front
5 Optical Front-to-Front Alignment
on front
6 Optical Exposure
7 Photoresist develop (Shipley 1813)
MaterialShipley 1813
8 Photoresist hardbake (110 degC)
Process characteristics:
Alignment side
Alignment side*
Batch size 1
Magnification 1
Material Shipley 1813
Resist thickness 1.3 µm
Wafer size
Wafer size
Comments:
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