Anodic bonding (with alignment): View

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Process Hierarchy
Bonding
Anodic bonding
Fusion bonding
Glass frit bonding
Miscellaneous bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front Anodic bonding (with alignment)

1 Solvent clean (acetone +IPA)

on front

2 Contact front-front align & expose

3 Anodic bonding (with alignment)

Process characteristics:

Bonding force

Specify contact force applied to substrates during bonding.

50 .. 150 N

Second substrate side bonded

Specify which side of the 2nd substrate is to bonded to the 1st substrate.

Substrate side bonded

Specify which side of the 1st substrate is to bonded to the 2nd substrate.

Temperature

Temperature of the substrates during bonding.

300 .. 550 °C

Voltage

Voltage applied across wafers during bonding.

500 .. 1200 V

Pressure

Pressure of process chamber during processing

1 atm

Wafer size

Comments:

No organic materials permitted.
No metals on non-bonded wafer faces.
Maximum interconnect thickness between bonded pair = 300A.
Customer to provide bonding cross section and estimate of area bonded.
Other metals may be considered on an individual basis.