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G-line contact photolithography (Shipley 220): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
G-line contact photolithography (Shipley 220)
1 Dehydration bake
on front
2 100% HMDS prime
MaterialHMDS
on front
3 Photoresist coat (Shipley 220)
MaterialShipley 220Thickness7 µm
4 Soft bake
on front
5 Contact front-front alignment & exposure
on front
6 Photoresist develop (Shipley 220)
MaterialShipley 220
Process characteristics:
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Magnification 1
Material Shipley 220
Max field size 100 mm
Min feature size 7 µm
Resist thickness 7 µm
Wafer size
Wafer size
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