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G-line contact photolithography (Shipley 3612): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
G-line contact photolithography (Shipley 3612)
1 Dehydration bake
on front
2 100% HMDS prime
MaterialHMDS
on front
3 Photoresist coat (Shipley 3612)
MaterialShipley 3612
4 Soft bake
on front
5 Contact front-front alignment & exposure
on front
6 Photoresist develop (Shipley 3612)
MaterialShipley 3612
Process characteristics:
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Resist thickness
Resist thickness*
Magnification 1
Material Shipley 3612
Max field size 100 mm
Min feature size 0.75 µm
Wafer size
Wafer size
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