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P-type polygermanium LPCVD: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
   DUV Lithography
   Deep boron diffusion
   Hot Embossing
   LIGA
   Maskless lithography
   Microwave bonding
   Shape memory alloy deposition
   Silicon-germanium processes
   Supercritical dry
   Xenon difluoride etch

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
P-type polygermanium LPCVD
1 Pre-furnace clean (for metallized wafers with DUV photoresist)
2 Polygermanium nucleation layer LPCVD
Materialpoly-Germanium
3 P-type polygermanium LPCVD
Materialpoly-GermaniumResidual stress26 MPa
on front
4 Sheet resistance measurement
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Wafers have duv photoresist
Wafers have duv photoresist*
yes no
Wafers metallized
Wafers metallized*
yes no
Wafers mos clean
Wafers mos clean*
yes no
Batch sizes 100 mm: 24
Excluded materials gold
Material poly-Germanium
Wafer size
Wafer size
Comments:
  • Wafers with metals or photoresists must be cleaned using "Photoresist removal", they are not allowed in "Piranha cleans".
  • "Piranha Clean II" is not a MOS CLEAN process.
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