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Low-stress silicon nitride LPCVD (<300 MPa): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Low-stress silicon nitride LPCVD (<300 MPa)
1 Piranha/HF clean
1.1 Piranha clean (MOS-clean)
1.2 10:1 HF dip
2 Low-stress silicon nitride LPCVD ( <300 MPa)
Materialsilicon nitrideRefractive index2.1 .. 2.3Residual stress0 .. 300 MPa
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3 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Batch sizes 100 mm: 24, 150 mm: 10
Excluded materials gold
Material silicon nitride
Residual stress 0 .. 300 MPa
Wafer size
Wafer size
Comments:
  • DCS/NH3 ratio is 4:1.
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