logo
Germanium E-beam evaporation: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Germanium E-beam evaporation
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 4000 Å
0.01 .. 4000 Å
Material germanium
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment SJ-20 evaporator
Equipment characteristics:
Batch sizes 100 mm: 8, 50 mm: 8, 75 mm: 8
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
rotating orbital
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
gallium arsenide, glass (category), indium phosphide, Pyrex (Corning 7740), quartz (fused silica), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm