Photoresist develop (AZ 9260): View

on front Photoresist develop (AZ 9260)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 10 µm

Batch size

Developer

Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.

AZ 400K

Etch rate

1.5 µm/min

Excluded materials

gold (category), copper

Feature geometry

Shape of feature with dimensions characterized by the minimum feature size

line

Field geometry

Shape of field with dimensions characterized by the maximum field size

circle

Material

AZ 9260

Max field size

90 mm

Min feature size

2 µm

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

AZ 9260: 1

Sides processed

either

Temperature

20 °C

Wafer size

Equipment

Air Control Microvoid

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

teflon carrier

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, silicon dioxide, Borofloat (Schott), alumina

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 1000 µm

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.