Xenon difluoride (XeF2) Isotropic Si etch: View

on front Xenon difluoride (XeF2) Isotropic Si etch

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 700 µm

Total exposed area

Total exposed silicon area at the beginning of the XeF2 etch

0 .. 7500 mm²

Ambient

Ambient to which substrate is exposed during processing

nitrogen, xenon difluoride

Batch size

Etch rate

0 .. 10 µm/min

Material

silicon

Pressure

Pressure of process chamber during processing

5 mTorr

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

silicon: 1

Setup time

45 min

Sides processed

either

Wafer size

Equipment

Xenon Difluoride Etching System

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

aluminum plate

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

Assumptions on the cost calculation above are
total exposed silicon area: 100mm2
etch depth: 50um
Isotropic etch of Si using XeF2 vapor. Lot size of 1 refers to 4" wafers; multiple smaller wafer pieces may be accommodated simultaneously.