Anodic bonding (without alignment) |
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| Process characteristics: |
| Pressure Pressure of process chamber during processing |
|
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| Second substrate side bonded |
|
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| Substrate side bonded |
|
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| Alignment type Method used to align materials to be bonded. |
none |
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| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
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| Batch size |
2 |
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| Second substrate diameter |
100 mm |
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| Second substrate materials |
Pyrex (Corning 7740), silicon |
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| Second substrate thickness |
300 .. 600 µm |
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| Temperature |
450 .. 500 °C |
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| Voltage |
1500 V |
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| Wafer size |
|
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| Equipment |
Karl Suss Bond aligner
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| Equipment characteristics: |
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
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| Wafer holder Device that holds the wafers during processing. |
aluminum chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
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MEMS and Nanotechnology Exchange