Rapid thermal anneal (oxygen): View

Rapid thermal anneal (oxygen)

Process characteristics:

Process duration

Running time of the process (excluding setup/shutdown time)

0 .. 5 min

Temperature

Maximum temperature the substrate reaches during a process

800 .. 1100 °C

Ambient

Ambient to which substrate is exposed during processing

oxygen

Batch size

Setup time

60 min

Sides processed

both

Wafer size

Equipment

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

quartz chuck

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 600 µm