Multipoly process: Recipe #2: View

Multipoly process: Recipe #2

Batch size

Excluded materials

gold (category), copper

Material

polysilicon

Microstructure

polycrystalline

Radius of curvature of released structures

6 mm

Residual stress

29 MPa

Sides processed

both

Stress gradient

1.5 MPa/µm

Temperature

615 °C

Thickness

3.12 µm

Wafer size

Equipment

MRL furnace 321-2

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

quartz chuck

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

This zero-stress multipoly recipe involves 8 sequential depositions with following thickness values (starting at substrate) 0.31, 0.52, 0.24, 0.52, 0.22, 0.52, 0.31, 0.48 (all in µm).
Odd numbered layers were deposited at 615 C and even numbered layers deposited at 570 C.

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.