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Photoresist develop (Shipley 1827): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Photoresist develop (Shipley 1827)
Batch size 1
Developer
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
MF-319
Material Shipley 1827
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
Shipley 1827: 1
Sides processed both
Temperature 25 °C
Wafer size
Wafer size
Equipment Wet etch bench
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
1 .. 150 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
200 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
teflon boat, teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
Comments:
  • Exposed photoresist.