Aluminum wet etch: View

Aluminum wet etch

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 2 µm

Batch size

Etch rate

0.25 µm/min

Etchant

Solutions and their concentrations.

Ashland's 16:1:1:2 Aluminum Etch

Mask materials

Materials that can be used to mask etching.

photoresist (category)

Material

aluminum

Min feature size

1 µm

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

aluminum: 1

Sides processed

both

Temperature

40 °C

Undercut rate

Length of undercut as a function of time

0.004 µm/s

Wafer size

Equipment

Metal wet bench

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

no-flat, 1-flat

Wafer holder

Device that holds the wafers during processing.

teflon cassette

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 700 µm

Comments:

MOS clean process.