Silicon freckle plasma etch: View

on front Silicon freckle plasma etch

Process characteristics:

Depth

Depth of material removed by etch process

0.01 .. 0.2 µm

Ambient

Ambient to which substrate is exposed during processing

chloropentafluorethane, sulfur hexafluoride

Batch size

Etch rate

0.19 µm/min

Loading effects

Free form text field for description of loading effects (e.g. bullseye)

minimal

Material

silicon

Pressure

Pressure of process chamber during processing

100 mTorr

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

photoresist (category): 6.3, silicon dioxide: 21, silicon: 1, titanium/tungsten: 2, tungsten: 1.7

Sides processed

either

Temperature

23 °C

Wafer size

Equipment

Drytek2

Equipment characteristics:

Piece geometry

Geometry of wafer pieces the equipment can accept

circular, irregular, rectangular

Piece thickness

Range of wafer piece thickness the equipment can accept

300 .. 600 µm

Wafer holder

Device that holds the wafers during processing.

electrode

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

quartz (single crystal), silicon, silicon on insulator, silicon on sapphire

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 600 µm

Comments:

The etch is to remove residual Si after Al/Si wet etch.