Silicon Dioxide PECVD PlasmaTherm 790: View

on front Silicon Dioxide PECVD PlasmaTherm 790

Process characteristics:

Thickness

0 .. 2 µm

Deposition rate

Rate at which material is added to a wafer

33 nm/min

Gas

5%Silane, Nitrous Oxide, Helium

Material

silicon dioxide

Microstructure

amorphous

Refractive index

1.45

Sides processed

either

Temperature

250 °C

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, no-flat, notched

Wafer holder

Device that holds the wafers during processing.

aluminum plate

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

gallium arsenide, indium phosphide, silicon, silicon carbide

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 700 µm