Rapid Thermal Anneal III-V Materials (air, nitrogen) |
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| Process characteristics: |
| Anneal ambient Ambient to which substrate is exposed during processing |
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| Process duration |
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| Temperature |
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| Batch size |
1 |
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| Wafer size |
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| Equipment |
Heat Pulse 410 III-V Rapid Thermal Anneal |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
quartz chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, gallium phosphide, indium phosphide |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 600 µm |
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