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E-beam evaporation: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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E-beam evaporation
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Sides processed either
Equipment
Comments:
  • The substrate is placed in a high vacuum chamber at room temperature with a crucible containing the material to be deposited. An electron beam is aimed at the material in the crucible causing it to evaporate and condense on all exposed cool surfaces on the vacuum chamber and substrate. The process is typically performed on one side of the substrate at a time.