Anodic bonding: View

Anodic bonding

Process characteristics:

1st bonded material

Specify first material in bonded pair.

1st bonded material

Specify first material in bonded pair.

2nd bonded material

Specify second material in bonded pair.

2nd bonded material

Specify second material in bonded pair.

Alignment tolerance

Tolerance of alignment if needed.

unconstrained

Alignment type

Method used to align materials to be bonded.

Ambient

Preferred bonding environment (if known).

Bond strength

Required strength of bond (if known).

unconstrained

Contact force

Preferred contact force applied when bonding materials (if known).

unconstrained

Temperature

Preferred bonding temperature (if known).

unconstrained

Equipment

Comments:

The substrates are bonded at elevated temperature (~400 degC) by placing and clamping the substrates between two metal electrodes. A high DC potential (up to >1kV) is applied between the electrodes creating an electrical field, which penetrates the substrates. One substrate is a glass that contains sodium ions, which at the elevated temperature are displaced from the bonding surface of the glass by the applied electrical field. The depletion of sodium ions near the surface of the glass makes the surface highly reactive with the silicon surface of the other substrate forming a solid chemical bond.