Phosphorus-doped polysilicon LPCVD: View

Phosphorus-doped polysilicon LPCVD

Process characteristics:

Thickness

Amount of material added to a wafer

0.1 .. 5 µm

Batch size

Deposition rate

Rate at which material is added to a wafer

0.0025 µm/min

Excluded materials

gold (category), copper

Material

polysilicon (n-type)

Pressure

Pressure of process chamber during processing

300 mTorr

Resistivity

0.0012 Ω*cm

Sides processed

both

Temperature

580 °C

Wafer size

Equipment

MRL furnace 321-3

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

quartz chuck

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 550 µm

Comments:

Wafers must be RCA cleaned within 24 hours of loading,or transferred directly from another furnace.
Doping: ~10^20 /cm^3
As deposited polysilicon films have compressive residual stress.

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.