Rapid Thermal Anneal Oxide, Nitride (air, oxygen, nitrogen) |
|---|
|
| Process characteristics: |
| Anneal ambient |
|
|---|
| Process duration |
|
|---|
| Temperature |
|
|---|
| Sides processed |
both |
|---|
| Wafer size |
|
|---|
| Equipment |
Heat Pulse 610 Dielectric Rapid Thermal Anneal |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 125 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
quartz chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 600 µm |
|---|
MEMS and Nanotechnology Exchange