Photoresist develop (PMMA): View

Photoresist develop (PMMA)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 1000 µm

Developer

Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.

Material

PMMA

Min feature size

5 µm

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

PMMA: 1

Sides processed

both

Temperature

35 °C

Wafer size

Equipment

Wetbench

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

no-flat, 1-flat, 2-flat, notched

Wafer holder

Device that holds the wafers during processing.

teflon carrier

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 1500 µm