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Copper E-beam evaporation: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Copper E-beam evaporation
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 0.1 µm
0 .. 0.1 µm
Material copper
Sides processed either
Wafer size
Wafer size
Equipment Temescal evaporator
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
mechanical clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
0 .. 1500 µm