Dry/wet/dry oxidation: View

Dry/wet/dry oxidation

Process characteristics:

Thickness

Amount of material added to a wafer

0.1 .. 2 µm

Batch size

Material

silicon dioxide

Measured film thickness variation (+/- %)

3.4

Pressure

Pressure of process chamber during processing

1 atm

Sides processed

both

Temperature

900 .. 1100 °C

Wafer size

Equipment

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

quartz boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 530 µm

Comments:

Standard wet oxidation process at Michigan.
Dry oxidation steps form interface layers only; bulk of oxide comes from the wet oxidation.
Wafers must have been Pre-Furnace Cleaned immediately prior to oxidation.