Dry oxidation: View

Dry oxidation

Process characteristics:

Thickness

Amount of material added to a wafer

20 .. 100 nm

Ambient

Ambient to which substrate is exposed during processing

oxygen

Batch size

Excluded materials

gold (category), copper

Growth rate

Rate at which film grows (linear approximation)

0.91 .. 1.4 nm/min

Loading effects

Free form text field for description of loading effects (e.g. bullseye)

None

Material

silicon dioxide

Pressure

Pressure of process chamber during processing

1 atm

Sides processed

both

Temperature

950 .. 1050 °C

Wafer size

Equipment

MRL furnace 322-1

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

quartz chuck

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

Wafers must be RCA cleaned within 24 hours of loading,or transferred directly from another furnace.

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.