LTO LPCVD: View

on front LTO LPCVD

Process characteristics:

Thickness

Amount of material added to a wafer

0.1 .. 5 µm

Ambient

Ambient to which substrate is exposed during processing

oxygen, silane

Batch size

Deposition rate

Rate at which material is added to a wafer

150 Å/min

Excluded materials

gold (category), copper

Material

silicon dioxide (low temperature)

Microstructure

amorphous

Pressure

Pressure of process chamber during processing

350 mTorr

Sides processed

either

Temperature

400 .. 450 °C

Wafer size

Equipment

MRL furnace 321-4

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

quartz chuck

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

Some oxide to deposit on back side of substrates
Wafers must be RCA cleaned within 24 hours of loading, or transferred directly from another furnace.

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.