Wet oxidation (non-metal): View

Wet oxidation (non-metal)

Process characteristics:

Thickness

Thickness of grown film.

0 .. 2 µm

Ambient

Ambient to which substrate is exposed during processing

nitrogen

Batch size

Material

silicon dioxide

Measured film thickness variation (+/- %)

9.1

Pressure

Pressure of process chamber during processing

1 atm

Sides processed

both

Temperature

1100 °C

Wafer size

Equipment

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

no-flat, 1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

quartz boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, silicon on insulator, silicon on sapphire

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 600 µm

Comments:

No metals allowed on wafers.
Standard pre-diffusion clean at diffusion wet bench.
Prices listed for 1100 degC oxidation temperature. Lower temperatures available upon request at higher cost.