Silicon nitride plasma etch: View

on front Silicon nitride plasma etch

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 2 µm

Ambient

Ambient to which substrate is exposed during processing

nitrogen

Batch size

Etch rate

1000 Å/min

Etchants

Solutions and their concentrations.

sulfur hexafluoride, helium

Excluded materials

gold

Material

silicon nitride

Num dummies

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

photoresist (category): 0.8, silicon nitride: 1

Setup time

60 min

Sides processed

either

Temperature

23 °C

Wafer size

Equipment

Lam 490 Plasma Etcher

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

helium clamp

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 600 µm