Silicon nitride PECVD: View

on front Silicon nitride PECVD

Process characteristics:

Thickness

Amount of material added to a wafer

0 .. 2 µm

Batch size

Material

silicon nitride

Measured film thickness variation (+/- %)

1.1

Residual stress

-100 MPa

Sides processed

either

Temperature

400 °C

Wafer size

Equipment

Equipment characteristics:

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon, silicon dioxide

Wafer thickness

List or range of wafer thicknesses the tool can accept

50 .. 2000 µm

Comments:

Stress values of 250-320 MPa (across one batch) were reported for 2um thick films in May 03.