Photoresist develop (Shipley 1827) |
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| Batch size |
1 |
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| Developer Agent that reacts with masking layer (e.g., photoresist) to etch it selectively. |
MF-319 |
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| Material |
Shipley 1827 |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
Shipley 1827: 1 |
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| Sides processed |
both |
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| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
Wet bench |
| Equipment characteristics: |
| Piece dimension Range of wafer piece dimensions the equipment can accept |
10 .. 75 mm |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
rectangular, circular, triangular shard, irregular, other |
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| Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 2000 µm |
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| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
teflon cassette |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 2000 µm |
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MEMS and Nanotechnology Exchange