Dry oxidation: View

Dry oxidation

Process characteristics:

Thickness

Amount of material added to a wafer

0 .. 0.25 µm

Excluded materials

gold

Material

silicon dioxide

Measured film thickness variation (+/- %)

7.3

Setup time

60 min

Sides processed

both

Temperature

750 .. 1100 °C

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 24, 150 mm: 24

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

quartz boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 600 µm