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| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
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| Batch size |
1 |
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| Pressure Pressure of process chamber during processing |
1 atm |
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| Process duration |
30 min |
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| Sides processed |
both |
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| Temperature |
150 °C |
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| Wafer size |
|
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| Equipment |
Singe oven |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
teflon boat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator, quartz (single crystal), germanium |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 550 µm |
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MEMS and Nanotechnology Exchange