Nichrome DC-magnetron sputtering (high power): View

on front Nichrome DC-magnetron sputtering (high power)

Process characteristics:

Thickness

Amount of material added to a wafer

0.01 .. 0.2 µm

Ambient

Ambient to which substrate is exposed during processing

vacuum

Batch size

Deposition rate

Rate at which material is added to a wafer

0.078 µm/min

Excluded materials

gold (category), copper

Material

Nichrome

Pressure

Pressure of process chamber during processing

5 mTorr

Sides processed

either

Temperature

27 °C

Wafer size

Equipment

Denton Discovery 24

Equipment characteristics:

Wafer holder

Device that holds the wafers during processing.

stainless steel

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

alumina, Borofloat (Schott), silicon, silicon dioxide

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 1000 µm

Comments:

This process uses a cathode power of 750W. An rf preclean can be performed.

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.