Aluminum microwave bonding: View

on front Aluminum microwave bonding

Process characteristics:

Bond area

Specify total bonding contact area between die.

0 .. 6.25 cm²

Batch size

Bond line width

10 .. 100 µm

Material

aluminum

Min bond layer thickness

1500 Å

Sides processed

either

Temperature

660 °C

Equipment

Equipment characteristics:

Die area

Die area the equipment can accept

6.25 cm²

Die dimension

Characteristic dimension of dies (e.g., side length of square) the equipment can accept

2.5 cm

Die holder

Device that holds the die(s) during processing

quartz tube

Die materials

List of allowed materials for dies accepted by this equipment

gallium arsenide, quartz (single crystal), silicon

Die thickness

List or range of die thicknesses the tool can accept

10 .. 3000 µm

Comments:

***Note*** This process does not work well since aluminum oxidizes easily and Al2O3 will not melt at as low a temperature as Al.
Three alternatives for alignment:
1) perimeter alignment only by MBI, requiring very precise wafer dicing
2) alignment by customer, requiring shipment of quartz fixtures by MBI to customer.
3) alignment using features on the faces to be bonded (+/-5um accuracy)
Two extra sets (four dies) required for (destructive) testing (no charge).
No wet chemicals or water allowed.
"Bond area" refers to the metals to be bonded.